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Verfasser Titel Jahr
zeige Details Li, A. P.., Zhang, Lidong., ... Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 1 (1996), p. 4-6
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1996
We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extra-thin Si nitride film (∼40 A(ring)) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 A(ring) from the semitransparent Au/extra-thin Si nitride film/p-Si structure has been detected. The effects of forward bias and annealing on the EL have been studied. © 1996 American Institute of Physics.
beteiligte Personen: Li, A. P.. , Zhang, Lidong. , Zhang, Y. X.. , Qin, G. G.. , Wang, Xin. , Hu, X. W..
Format: Elektronisch
Sprache: English
Erschienen: 1996.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.118115

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